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Introduction to
Our Plasma Technologies

Unique expertise in plasma processing

With systems designed for high volume manufacturing (HVM) or research and development we deliver the hardware and process solutions you need for your Lab or Fab. Our plasma processing technology offers a wide range of advanced capabilities for etching, deposition and material growth. With over 8,000 recipes in our library, we provide process development and support, customised to our customers' needs, enabling them to achieve the right cost of ownership with high wafer yield and fast, high-performance processing. 

What we offer:

  • Plasma Etching & Deposition
  • Ion Beam Etching & Deposition
  • Atomic Layer Etching & Deposition
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Plasma Etching & Deposition 

Plasma process is essential for manufacturing of advanced microelectronics. Our plasma processes provide the reliability to confidently achieve the desired device characteristics. Our versatile plasma etching and deposition tools deliver: 

  • Etching and deposition of a wide variety of films
  • Low damage and precise depth and thickness control
  • Processes over a wide temperature range

Plasma Etching

  • Reactive Ion Etching (RIE)
  • Reactive Ion Etching – Plasma Enhanced (RIE-PE)
  • Inductively Coupled Plasma Etching (ICP)
  • Deep Silicon Etching (DSiE)

Plasma Deposition

  • Plasma Enhanced Chemical Vapour Deposition (PECVD)
  • Inductively Coupled Plasma Chemical Vapour Deposition (ICPCVD)
  • Chemical Vapour Deposition (CVD)
Dielectric metal plasma RIE etching

Dielectric metal plasma RIE etching

Inductively Coupled Plasma Chemical Vapour Deposition

ICP Chemical Vapour Deposition

Ion Beam Etching & Deposition

Ion beam etch and ion beam deposition offers film quality and etch control coupled with excellent uniformity. It is ideal for a wide range of applications such as MRAM, laser bar facets and thin film magnetic heads. Ion beam technology enables researchers and high volume manufacturers to produce dense, high quality films with smooth surfaces.

Ion Beam Etching electron

Ion Beam Etching electron

Atomic Layer Etching & Deposition

Many advanced devices require atomic scale precision during fabrication, to deliver the accuracy needed we provide the advanced processing techniques of atomic layer etching and deposition. This capability to manipulate and control matter precisely enables R&D and production of the next generation of semiconductor devices.

Atomic Scale Etching

This technique is designed to allow the accurate removal of one atomic layer at a time; a level of control unachievable using conventional etching.

Atomic Scale Deposition

This technique offers precisely controlled deposition of films for advanced applications with a single atomic layer deposited per process cycle, it is self-limiting and gives conformal coating into high aspect ratio structures.

Atomic layer deposition of dielectrics & metals with low damage

Atomic layer deposition of dielectrics & metals

25nm wide Si trenches etched to 110nm depth by ALE

25nm wide Si trenches etched to 110nm depth by ALE

Contact us at plasma-experts@oxinst.com to find out about our process solutions for etching, deposition and materials growth.

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