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Platinum (Pt) is a highly conductive noble metal that is commonly used in electrical contacts to semiconductor devices. It can be used in many applications due to its catalytic properties and its stability in oxidizing environments.

Platinum can be etched for the manufacturing of a wide range of advanced devices using Inductively Coupled Plasma (ICP), Ion Beam Etching and Reactive Ion Etching (RIE). Furthermore, it may be deposited using Atomic Layer Deposition (ALD) and Ion Beam Deposition (IBD).


Optimised etching rate with good selectivity to resist.

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Process achieves good etch rate available with photoresist mask.

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Pt etch with rotation and adjustable tilt. Process expertise applied to control redeposition and produce good profile at competitive etching rate. Competitive process results.

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Ion Beam Etching with Platinum

Excellent material quality, not only for the 200-300 °C deposition temperature range also used for thermal ALD, but by using oxygen and hydrogen plasmas also possible at low deposition temperature. These can even be down to room temperature for temperature sensitive applications such as deposition on polymer or resists.

  • Wafer size: up to 200mm
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Competitive process results.

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