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Cobalt (Co) is used in mainstream semiconductor production as a barrier to inhibit electromigration and the production of specialised, wear resistant, alloys. It is etched using Inductively Coupled Plasma (ICP) or Ion Beam Etching (IBE). Oxford Instruments Plasma Technology process expertise is applied to control redeposition and produce good profile at competitive etching rate.

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  • Wafer size: up to 200mm
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