Part of the Oxford Instruments Group
Enabling the SiC revolution: Plasma processing for better performance

20 February 2019, 15:00 GMT


Plasma Processing for Maximum SiC Performance

We have developed an innovative set of plasma process solutions designed to enable maximum Silicon Carbide (SiC) device performance.

In this webinar you will learn our top five tips on how plasma etch and deposition play an essential role in making great devices:

  • How surface preparation using plasma etching is used to help grow high quality device layers
  • Mask deposition and etching using PECVD for high density masks
  • Using high etch rate etching of mesas and trenches using high density plasma etching for high throughput and low COO
  • Understanding how etch profile plays an essential role
  • Deposition of barrier layers to improve interfaces and increase device efficiency

Everything you wanted to know about plasma process solutions for SiC but were afraid to ask!

Can’t attend the live event? We’ve got you covered!  Register now, and we’ll send you a link to view the webinar on-demand.

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High aspect ratio SiC feature

Meet the Presenter

Mark Dineen
Dr Mark Dineen
Technical Marketing Manager