Part of the Oxford Instruments Group
Optimising ALD High-k Oxides for Novel Applications

19 April 2018

Optimising ALD High k Oxides

Dr Uwe Schroeder and Dr Harm Knoops will discuss the ALD of ferroelectric HfO2 for novel memory applications and the tuning properties of TiO2 and HfO2 by substrate biasing during Plasma ALD.

Meet the Presenters

Harm Knoops
Dr Harm Knoops
Atomic Scale Segment Specialist at Oxford Instruments
Uwe Schroeder
Dr Uwe Schroeder
Deputy Scientific Director at NaMLab GmBH