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ARE YOU CREATING THE BEST SILICON CARBIDE SUBSTRATES?

We're supplying leading-edge plasma systems to Tier 1 substrate suppliers for pre-epi surface quality enhancement.

LEADING-EDGE PLASMA SOLUTIONS FOR SiC WAFER PREPARATION

Plasma etching has been proven to provide the high quality substrate finish needed to minimise epi defects and maximise device performance.

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UNIQUE BENEFITS

  • Maintain smooth surface
  • Removal of sub-surface damage layers from sawing and polishing
  • Gentle process with no use of abrasive particles
  • High-throughput to support current and future capacity demand
  • Low cost of ownership (COO)
  • Established in major substrate production suppliers

We have developed an innovative set of plasma process solutions designed to enable maximum SiC device performance.

Our solutions allow for the best SiC substrate surface quality, and we want to prove it to you. Request a sample below and we can process your wafers at our advanced applications facility in the UK.

PlasmaPro 100 Cobra ICP Etching cluster system for high-throughput manufacturing

PlasmaPro 100 Cobra ICP Etching Cluster System – Excellent uniformity, high-throughput and low damage to substrates configurable as a clusterable cassette-to-cassette system.

PLASMA PRODUCES THE HIGHEST QUALITY SURFACE IN WAFER PREPARATION

Defects introduced during standard wafer processing can be removed as plasma processing provides a gentler surface treatment.

The solution is based on chemical reactions at the atomic scale to allow control of surface and sub-surface quality.

Chart showing plasma surface etching offers lowest number of defects in wafer preparation

WHITE PAPER

World Leading Plasma Process Solutions for the Manufacture of SiC Power Devices

SiC Power Device White Paper front cover

In this white paper, we consider the role of plasma processing and its importance in defining device performance and optimal strategies for the application. We also examine the structure of primary SiC devices such as Schottky barrier diodes (SBDs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs).

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WEBINAR

Enabling the SiC Revolution: Plasma Processing for Better Performance

Webinar on SiC plasma processing

In this webinar, we presents the top 5 ways plasma processing can be used to enhance SiC device performance. We look at surface preparation using plasma etching; mask deposition using PECVD; high etch-rate etching of mesas and trenches; depostion of barrier layers to improve interfaces and efficiency, and more.

PlasmaPro Cobra cluster system on MMX 700 handler

WORLD CLASS SYSTEMS

We offer a full range of world-class solutions for plasma etching and deposition technologies, including RIE, PECVD, and ICP Etching. We have served wide-band gap (WBG) production customers for many years and built a solid reputation for performance & reliability. 

  • Compatible with all wafer sizes up to 200mm
  • Low cost of ownership and ease of serviceability
  • Excellent uniformity, high throughput and high precision processes
  • In-situ chamber cleaning and end-pointing
Customer support engineer working on production system

GLOBAL CUSTOMER SUPPORT

Oxford Instruments is committed to providing comprehensive, flexible and reliable global customer support. We offer excellent quality service throughout the life of your system to ensure maximum uptime.

  • Remote diagnostics software provides quick & easy fault diagnosis & resolution
  • Support contracts are available to suit the budget and situation
  • Global spares in strategic locations for quick response
  • World-wide service engineers provide preventative maintenance service & support

Contact us today to find out how we can help enable maximum performance for your SiC power devices.

REQUEST A SAMPLE DEMO Discrete SiC Power Devices Brochure DOWNLOAD BROCHURE