Plasma etching has been proven to provide the high quality substrate finish needed to minimise epi defects and maximise device performance.
Silicon carbide has a uniquely desirable set of properties for power device manufacturing and is progressively being applied to achieve the breakthrough performance required to enable new and exciting technologies.
We have developed an innovative set of plasma process solutions designed to enable maximum SiC device performance.
Defects introduced during standard wafer processing can be removed as plasma processing provides a gentler surface treatment.
The solution is based on chemical reactions at the atomic scale to allow control of surface and sub-surface quality.
We offer a full range of world-class solutions for plasma etching and deposition technologies, including RIE, PECVD, and ICP Etching. We have served wide-band gap (WBG) production customers for many years and built a solid reputation for performance & reliability.
Oxford Instruments is committed to providing comprehensive, flexible and reliable global customer support. We offer excellent quality service throughout the life of your system to ensure maximum uptime.
In this white paper, we consider the role of plasma processing and its importance in defining device performance and optimal strategies for the application. We also examine the structure of primary SiC devices such as Schottky barrier diodes (SBDs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs).READ NOW
In this webinar, we presents the top 5 ways plasma processing can be used to enhance SiC device performance. We look at surface preparation using plasma etching; mask deposition using PECVD; high etch-rate etching of mesas and trenches; depostion of barrier layers to improve interfaces and efficiency, and more.WATCH ON-DEMAND