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Tantalum Pentoxide 

Tantalum Pentoxide (Ta2O5), also known as tantalum(V) oxide, is used in modern capacitors and as a high-k dielectric in DRAM capacitors. It can be etched using Inductively Coupled Plasma (ICP) and Reactive Ion Etching (RIE). Ta2O5 may be deposited using Atomic Layer Deposition (ALD).

Good etching rate.

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High material quality and low damage, even at low deposition temperature.

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Excellent stoichiometry with competitive deposition rate. 

  • Wafer size: 200mm
  • Product: FlexAL
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