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Silicon Oxide

Silicon Dioxide (SiO2) in its variety of forms is an essential material for semiconductor, MEMs, and optoelectronic devices. Quartz is used in gratings for Augmented Reality (AR); Doped oxides are used for waveguides and SiO2 can be used for device passivation. SiO2 may be deposited and etched using several technologies:

Silicon Dioxide

The PlasmaPro 100 Polaris brings together unique Electrostatic Clamp (ESC) technology along with our well established Cobra300 ICP source. This delivers excellent repeatability while maintaining high etch rate and profile quality. 

Process optimised for excellent control of profile at optimised etching rate.

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High aspect ratio high quality nanoscale SiO2 etch

Anisotropic and isotropic profile available at competitive etching rate with optimised uniformity.

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Excellent control of profile with expertise in optimising tilt of features.

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Excellent material quality and low damage, even at low deposition temperature.

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SiO2 conformality

Very high conformality with short cycle time (90 ms prec. and 4.5 s plasma). Courtesy TU/e

Excellent uniformity of both thickness and refractive index, and stress control available at high deposition rate. Different chemistries can be used: pure and diluted silane.

  • SiH4/N2O
  • SiH4/O2
  • TEOS/O2
  • High quality films with low BOE
  • Refractive index control
  • Low temperature deposition down to 20°C
  • Deposition rates from 5-100nm/min
  • Doping possible using GeH4, PH3, B2H6, TMB, TMP.
  • Single wafer size: up to 200mm
  • Batch size: up to 5x2"
  •  Single wafer size: up to 300mm
  • Batch size: up to 22x2", 9x3"5x100mm, 3x120mm
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SiO2 deposition with TEOS

SiO2 deposited using TEOS and O2 by ICP CVD in ~50μm deep trench 4:1 aspect ratio

Excellent uniformity of both thickness and refractive index. Stress control available at high deposition rate. Different chemistries can be used: pure and diluted silane. 

  • SiH4/N2O
  • TEOS/O2
  • High quality films with low BOE
  • Refractive index control
  • Deposition rates from 5->1000nm/min
  • Doping possible using GeH4, PH3, B2H6, TMB, TMP.
  • Single wafer size: up to 200mm
  • Batch size: up to 9x2", 4x3" 

 

  • Single wafer size: up to 300mm
  • Batch size: up to 43x2", 19x3", 10x100mm, 7x120mm, 4x150mm, 2x200mm

 

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Excellent stoichiometry with competitive deposition rate.

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