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Germanium Antimony Telluride

GST (full chemical formula Ge2Sb2Te5) is used as a phase shift memory material. GST and related films may be dry etched using Inductively Coupled Plasma (ICP), Reactive Ion Etching (RIE) or Ion Beam Etch (IBE).

More on ICP Request more information
  • Wafer size: up to 200mm  
  • Product:  Ionfab300
More on IBE Request more information
More on RIE Request more information

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