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2D Materials

2D materials such as graphene, MoS2 or hBN can be used to enhance current devices and build new device architectures. FETs, batteries and filters with unique properties can now be realised.

 

What are 2D Materials?

2D Materials at the very limit of thin film dimensions with thicknesses down to a single atom limit. These materials exhibit superlative electronic and optoelectronic properties which researchers today are working on harnessing for next-generation devices for electronics, optoelectronics and flexible devices. 

While graphene kick-started exploration and application of these ultra-thin materials, it has created a vast field of exploration and application of several other 2D materials like nitrides (hBN ), transition metal dichalcogenides (MoS2, S2, WSe2 etc.) and even 2D oxides. 

 

Key Information

  • High quality 2D materials with low defect density
  • Process temperatures 400°C-1100°C
  • Load-locked system offers fast change of samples and minimizes deposition chamber contamination
  • Extensive characterization of 2D materials performed to ascertain quality using techniques such as Raman spectroscopy and Photoluminescence
2D Materials

 

 

2D graphene growth

This specification is issued for Graphene obtained through Chemical Vapour Deposition (CVD) processes.

  • Load-locked system offers higher throughput, as no cooling of the growth chamber is required to exchange samples
  • He purge gas is required for the process
  • The presence of Graphene layer(s) will be tested by Raman Spectroscopy peak 2D analysis
  • 1 layer Graphene will be confirmed by Raman Spectroscopy
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Raman shift

This specification is issued for Boron Nitride obtained through Chemical Vapour Deposition (CVD) processes. For the purpose of process demonstration, B2H6 is used as Boron source and NH3 as the Nitrogen sources on Cu/Ni foils as catalyst substrates.

  • Temperature >900°C
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Raman shift diagram

Growth of MoS2 and related 2D Transition Metal Dichalcogenides

We offer PECVD systems equipped with precursor vapour delivery modules for the growth of two dimensional layers of materials like MoS2, WS2 etc.

Excellent thickness control with low defects and strong  photoluminescence  

High quality MoS2:

  • AFM shows defined step height and smooth uniform film
  • Raman indicates one mono-layer is deposited with characteristic peaks spaced 21.1cm-1 apart
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Raman shift diagram Raman shift Mos2 and sapphire

In situ growth of 2D Molybdenum Disulphide (MoS2) Graphene heterostructures

We offer CVD/PECVD/Remote plasma (ICP) CVD systems equipped with precursor vapour delivery modules for the growth of two dimensional layers and heterostructures of materials like Graphene, MoS2, WS2 etc. 

This is a three step process:

  • Step 1: Grow Graphene on Cu
  • Step 2: Transfer Graphene from Cu on to SiO2
  • Step 3: Grow MoS2 on Graphene transferred on SiO2

Process features:

  • Temperature >900°C
  • Formation of a single layer of MoS2 confirmed by Raman Spectroscopy
  • Deposition time is critical to ensure that a complete monolayer of MoS2 is formed
  • Temperature of MoS2 deposition on Graphene and its quality is critical for stability of the Graphene during MoS2 process
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Raman shift diagrams

Direct growth of nanocrystalline Graphene on dielectric substrates using plasma enhanced chemical vapour deposition.

  • Temperature >900°C
Raman shift Request more information
Nanocrystaline
  • Temperature 600°C - 900°C
  • Load-locked system offers higher throughput, as no cooling of the growth chamber is required to exchange samples
  • He purge gas is required for the process
  • Nucleation depends on the underlying substrate and C-source combination (Carbon, 2013, Vol. 58, 59–65)
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2D Materials

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