2D materials such as graphene, MoS2 or hBN can be used to enhance current devices and build new device architectures. FETs, batteries and filters with unique properties can now be realised.
2D Materials at the very limit of thin film dimensions with thicknesses down to a single atom limit. These materials exhibit superlative electronic and optoelectronic properties which researchers today are working on harnessing for next-generation devices for electronics, optoelectronics and flexible devices.
While graphene kick-started exploration and application of these ultra-thin materials, it has created a vast field of exploration and application of several other 2D materials like nitrides (hBN ), transition metal dichalcogenides (MoS2, S2, WSe2 etc.) and even 2D oxides.
This specification is issued for Graphene obtained through Chemical Vapour Deposition (CVD) processes.
This specification is issued for Boron Nitride obtained through Chemical Vapour Deposition (CVD) processes. For the purpose of process demonstration, B2H6 is used as Boron source and NH3 as the Nitrogen sources on Cu/Ni foils as catalyst substrates.
Growth of MoS2 and related 2D Transition Metal Dichalcogenides
We offer PECVD systems equipped with precursor vapour delivery modules for the growth of two dimensional layers of materials like MoS2, WS2 etc.
Excellent thickness control with low defects and strong photoluminescence
High quality MoS2:
In situ growth of 2D Molybdenum Disulphide (MoS2) Graphene heterostructures
We offer CVD/PECVD/Remote plasma (ICP) CVD systems equipped with precursor vapour delivery modules for the growth of two dimensional layers and heterostructures of materials like Graphene, MoS2, WS2 etc.
This is a three step process:
Direct growth of nanocrystalline Graphene on dielectric substrates using plasma enhanced chemical vapour deposition.