Part of the Oxford Instruments Group

ALD Processing for 2D Materials: Introducing FlexAL 2D

Introducing FlexAL2D

Our ALD and 2D technical specialists have teamed with the Eindhoven University of Technology research teams to realise Atomic layer deposition (ALD) of 2D transition metal dichalcogenides (TMDCs) for nanodevice applications

The FlexAL2D offers a number of benefits for growth of 2D materials:

2D materials growth Robust ALD processes for 2D materials Tunable morphology
At CMOS compatible temperatures Self-limiting ALD growth Control over basal plane or edge plane orientation
With precise digital thickness control MoS2: Growth of ALD dielectrics & other ALD layers on 2D materials in one tool
Over a large area (200mm wafers) Oxygen and carbon free (<2%) Create advanced 2D device structures
High growth per cycle ~0.1 nm/cycle RF substrate biasing option for film property control
Crystalline material above 300°C