2D materials are at the very limit of thin-film dimensions with thicknesses down to a single atom. These materials exhibit superlative electronic and optoelectronic properties which researchers today are trying to harness for next-generation devices for electronics, optoelectronics and energy applications.
While graphene kick-started exploration and application of these ultra-thin materials, it has created a vast field of exploration and application of several other 2D materials like nitrides (hBN) and transition metal dichalcogenides (MoS2, WSe2 etc.). While these materials can be found in nature and can be exfoliated from the bulk crystals, chemical vapour-based techniques are employed to allow easy scale-up for future devices.DOWNLOAD BROCHURE
2D materials exhibit superlative electronic and optoelectronic properties which researchers today are working on harnessing for next-generation devices for electronics, optoelectronics and flexible devices.
Various aspects of 2D materials can be beneficial for applications and depending on the application people might aim for single layers with high mobility for transistors or multiple layers in many orientations for catalysis applications, such as water splitting.
At Oxford Instruments Plasma Technology we have excellent experience with a wide range of processes, from high-temperature CVD to low-temperature ALD.
Visit our 2D materials processes page for further information.
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For atomic layer deposition approaches to 2D materials, our FlexAL system can be specifically configured to allow growth of 2D transition metal dichalcogenides, such as MoS2. The FlexAL is ideal for growing metal oxide seed layers for sulfurization, deposition of high-k dielectrics, surface pretreatments and 2D materials encapsulation.
Find out more about FlexAL.
FlexAL ALD system for 2D materials beyond graphene